c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SBN13003A SBN13003A SBN13003A SBN13003A rev.a sep.2010 high voltage fast -switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage , high speed switching characteristics required such as lighting system, switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 700 v v ceo collector-emitter voltage i b =0 400 v v ebo emitter-base voltage i c =0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p =5ms 1.5 a p c total dissipation at tc=25 18 w t j operation junction temperature -40~150 t stg storage temperature -40~150 tc:case temperature(good cooling) thermal characteristics symbol parameter value units r qja thermal resistance junction to ambient 13.6 /w
SBN13003A SBN13003A SBN13003A SBN13003A 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a ic=1.5a,ib=0.5a - - 0.3 0.5 1.0 v v be(sat) base -emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a - - 1.0 1.2 v i cbo collector base cutoff current (vbe=-1.5v) vcb=700v vcb=700v,tc=100 - 1.0 5.0 ma hfe dc current gain vce=2v,ic=0.5a vce=2v,ic=1.0a 10 5 - - 30 25 ton ts tf resistive load turn-on time storage time fall time v cc =125v,ic=1a i b1 =0.2a,i b2 =-0.5a tp=25 s - 0.25 1.32 0.23 1.0 3.0 0.4 s ts tf inductive load storage time fall time v cc =15v,ic=1a i b1 =0.2a,i b2 =-0.5a l=0.35mh,vclamp=300v - - 1.2 0.12 4.0 0.3 s ts tf inductive load storage time fall time v cc =15v,ic=1a i b1 =0.2a,i b2 =-0.5a l=0.35mh,vclamp=300v tc=100 - - 1.8 0.16 5.0 0.4 s note: pulse test : pulse width 300,duty cycle 2%
SBN13003A SBN13003A SBN13003A SBN13003A 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1dc current gain fig.2 base -emitter saturation voltage fig.3 collector-emitter saturation voltage fig.4 safe operation area fig.5 static characteristics fig.6 power derating
SBN13003A SBN13003A SBN13003A SBN13003A 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-92 to-92 to-92 to-92 package package package package dimension dimension dimension dimension resistive load switching test circuit inductive load switching & rbsoa test circuit
SBN13003A SBN13003A SBN13003A SBN13003A 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance unit:mm
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